Transistor IRFZ34N MOSFET N-Channel 55V TO-220
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Transistor IRFZ34N MOSFET N-Channel 55V TO-220, MOSFET N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost contribute to its wide acceptance throughout the industry. Features Dynamic dV/dt Rating 175C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Specifications FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250AmicroA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): A 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C to 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB For more about Transistors, click here.