IC 4164-150 DRAM 65,536-Bit (65,536x1) 150ns with Page Mode DIP-16
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IC 4164-150 DRAM 65,536-Bit (65,536x1) 150ns with Page Mode DIP-16, 64Kx1 Dynamic Random Access Memory (DRAM) 150ns DIP-16The HYB 4164 is a 65,536-words by 1-bit (64KB), MOS random access memory circuit fabricated with 5-Volt only N-Channel silicon gate technology, using double layer polysilicon. To protect the chip against alpha radiation a proprietary chip cover is used. The HYB uses single transistor dynamic storage cells and dynamic control circuitry to achieve high speed at very low power dissipation.