MOSFET P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK TO-251
MOSFET P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK TO-251, MOSFET P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK TO-251 Specifications Series: HEXFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25C: 31 A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10 V Rds On (Max) @ Id, Vgs: 65 mOhm @ 16 A, 10 V Vgs(th) (Max) @ Id: 4 V @ 250 AmicroA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Vgs (Max): A 20 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Power Dissipation (Max): 110 W (Tc) Operating Temperature: -55C to 175C (TJ) Mounting Type: Through Hole Supplier Package: IPAK (TO-251), TO-251-3 Short Leads, TO-251AA