IC 4164-120 NMOS DRAM 64K-Bit (64K x 1) 120ns w/Page Mode
IC 4164-120 NMOS DRAM 64K-Bit (64K x 1) 120ns w/Page Mode, DRAM 64K x 1 Bit NMOS Dynamic RAM with Page Mode DIP-16 The KM4164B is a fully decoded NMOS dynamic random access memory organized as 65,536 one-bit words. The design is optimized for high speed, high performance applications such as computer memory, peripheral storage and environments where low power dissipation and compact layout are required. The KM4164B features page mode which allows high speed random access of up to 256-bits within the same row. Multiplexed row and column address inputs permit the KM4164B to be housed in a standard 16-pin DIP package. Features tRAC: 120 ns tCAC: 60 ns tRC: 220 ns Page mode capability Single +5V A 10% power supply Common I/O using early write TTL compatible inputs and output Schmitt Triggers on all input control lines RAS-only and Hidden Refresh capability 128 cycle/2ms refresh JEDEC standard pinout in 16-pin DIP