IC 511001AP-10 CMOS DRAM 1,048,576-Bit (1,048,576x1) 70ns
IC 511001AP-10 CMOS DRAM 1,048,576-Bit (1,048,576x1) 70ns, Memory CMOS Dynamic RAM 70ns DIP-18 Specifications Organization: 1,048,576 words by 1 bit Low power: 440 mW max. Output unlatched at cycle end allows two-dimensional chip selection Common I/O capability using "EARLY WRITE" operation TTL compatible PDIP-18