Bipolar (BJT) Transistor NPN - Darlington 100V 12A 4 MHz 150W Through Hole TO-204 (TO-3)
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Bipolar (BJT) Transistor NPN - Darlington 100V 12A 4 MHz 150W Through Hole TO-204 (TO-3), Bipolar (BJT) Transistor NPN - Darlington 100V 12A 4 MHz 150W Through Hole TO-204 (TO-3) Specifications Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 3 V @ 120 mA, 12 A Current - Collector Cutoff (Max): 1 mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6 A, 3 V Frequency - Transition: n/a Operating Temperature: -65C to 200C (TJ) Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 150 W Mounting Type: Through Hole, chassis mount Package: TO-204AA, TO-3