IC 41256P-10 DRAM 262,144-Bit (262,144x1) 100ns 5V Low Power NMOS TTL
IC 41256P-10 DRAM 262,144-Bit (262,144x1) 100ns 5V Low Power NMOS TTL, DRAM 262144 Word x 1-Bit 100ns 5V DIP-16 Features 262,144 word x 1-bit organization; NMOS technology; Industry standard 16-pin DIP; Single +5V supply, A 10% tolerance; Low power dissipation (max.): 358 mW active; 28 mW standby; 100 ns access time; 200 ns cycle time; All inputs and outputs are TTL-compatible; On-chip substrate bias generator; Tristate data output; Read, write, read-modify-write, RAW-only refresh, hidden-refresh; Common I/O capability using "early write" operation; Page mode read and write, read-write; 256 refresh cycles with 4 ms refresh period;