Bipolar Junction Transistor (BJT) PNP Darlington 100V 8A 75W TO-225AB
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Bipolar Junction Transistor (BJT) PNP Darlington 100V 8A 75W TO-225AB, Bipolar Junction Transistor (BJT) PNP Darlington 100V 8A 75W TO-225AB Specifications Transistor Type: PNP Darlington Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 2 V @ 12 mA, 3 A Current - Collector Cutoff (Max): 500 micro;A DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3 A, 4 V Power - Max: 75 W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package: TO-225AB Base Number: MJE6042