Bipolar Junction Transistor (BJT) NPN 60V 50mA 360mW TO-18
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Bipolar Junction Transistor (BJT) NPN 60V 50mA 360mW TO-18, Bipolar Junction Transistor (BJT) NPN 60V 50mA 360mW TO-18 Specifications Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300 mV @ 100 AmicroA, 1 mA Current - Collector Cutoff (Max): 2 nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10 mA, 5 V Power - Max: 360 mW Operating Temperature: -65C to 200C (TJ) Mounting Type: Through Hole Package: TO-206AA, TO-18-3 Metal Can