Bipolar Junction Transistor (BJT) Array 4 PNP 40V 200mA 1W SOIC-16
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Bipolar Junction Transistor (BJT) Array 4 PNP 40V 200mA 1W SOIC-16, Bipolar Junction Transistor (BJT) Array 4 PNP 40V 200mA 1W SOIC-16 Specifications Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 400 mV @ 5 mA, 50 mA Current - Collector Cutoff (Max): N/A DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10 mA, 1 V Power - Max: 1 W Frequency - Transition: 200 MHz Operating Temperature: -55C to 150C (TJ) Mounting Type: Surface Mount Package: SOIC-16 (0.154", 3.9mm W) Base Number: MMPQ3906